has Server used IP Address with Hostname in United States. Below listing website ranking, Similar Webs, Backlinks. This domain was first 2002-08-08 (19 years, 49 days) and hosted in Boulder United States, server ping response time 45 ms

DNS & Emails Contact

This tool is used to extract the DNS and Emails from this domain uses to contact the customer.

Fetching Emails ...

Extract All Emails from Domain

Top Keywords Suggestions

Keywords suggestion tool used Siliconsultant keyword to suggest some keywords related from this domain. If you want more, you can press button Load more »

1 Silicon sultans
2 Silicon sultan definition
3 Sli consulting
4 Sila consulting
5 Sila consulting seattle

Hosting Provider

Region: CO
City: Boulder
Postal Code: 80308
Latitude: 40.014999389648
Longitude: -105.27059936523
Area Code: 303
Email AbuseNo Emails Found

Find Other Domains on Any IP/ Domain

New! Domain Extensions Updated .com .org .de .net .uk   » more ...

Domains Actived Recently

   » (17 hours ago)

   » (2 day ago)

   » (22 hours ago)

   » (2 day ago)

   » (14 day ago)

   » (2 day ago)

Results For Websites Listing

Found 46 Websites with content related to this domain, It is result after search with search engine

Siliconsultant Silicon Crystal Growth Consultant For   DA: 22 PA: 22 MOZ Rank: 44

  • In this site, you can learn more about Siliconsultant, access publication references, examine past accomplishments and research activities, and provide feedback
  • Check out the Silicon Info page as well, where you will find a vast collection of interesting facts about crystalline Si materials.

Solid-Source Doping Of Float-Zoned Silicon With B, …   DA: 12 PA: 24 MOZ Rank: 37

  • (*address after 9/1/03:, P.O
  • Box 1453, Evergreen, CO 80437 USA) Abstract We report on a solid-source method to introduce dopants or controlled impurities directly into the melt zone during float-zone growth of single- or multicrystalline ingots

Ted Ciszek – Background, Consulting, Music And More   DA: 14 PA: 14 MOZ Rank: 30

Established consulting activity “” in 2004; Focus is on semiconductor silicon crystal growth and materials science; Consulted for over 40 clients, from sole proprietors to Fortune 500

Gemstones, Gems, Lab-grown, Synthetic, Faceted   DA: 11 PA: 13 MOZ Rank: 27

  • 9 rows · Lab-Grown Gemstones
  • We offer faceted gemstones cut from laboratory-grown crystals in the …

Gemstones, Loose Cut Faceted Natural Gems For Custom …   DA: 11 PA: 12 MOZ Rank: 27

  • Loose faceted cut colored gems for jewelry
  • Aquamarines, morganite, rhodolite garnets, amethysts, citrines, blue topaz, tourmalines, apatite, and

Steve Smith   DA: 16 PA: 16 MOZ Rank: 37

  • Principal Scientist/Owner at Geolite/Siliconsultant Evergreen, CO
  • Research Engineer at Bert Thin Films, LLC Louisville, KY

Amethyst Gemstones, Faceted Loose Cut Stones   DA: 11 PA: 13 MOZ Rank: 30

  • This 9x7mm oval Portuguese brilliant flower cut amethyst is a beautiful rich purple with just a hint of red in the color, which is called Siberian amethyst
  • The gem has small visible inclusions

Table Of Contents Description   DA: 11 PA: 14 MOZ Rank: 32

  • Morganite (pink/peach colored beryl) faceted gemstones, natural
  • Lists fine jewelry we have made with inlay, intarsia, faceted stones, and silver
  • Lists a large variety of cabochon, bead, and other semiprecious-stone informal jewelry
  • Details the procedures and terms for ordering items from us.

Morganite Faceted Gemstones, Morganite Loose Cut Gems   DA: 11 PA: 14 MOZ Rank: 33

  • This large 14x10mm oval Morganite is a gorgeous pink color, faceted in a brilliant flower cut
  • Clarity is good, with only very slight inclusions
  • This is a natural gem that has not been heat-treated, filled, or altered in any way

Dependence Of Precipitation Behavior Of Cu And Ni …   DA: 12 PA: 24 MOZ Rank: 45

Dependence of precipitation behavior of Cu and Ni in CZ and multicrystalline silicon on cooling conditions A.A.Istratov1, T.Buonassisi1, M.A.Marcus2, T.F.Ciszek3, and E.R.Weber1 1 University of California, Berkeley CA 94720 2 Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley CA 94720 3 National Renewable Energy Laboratory, Golden, CO 80401; present address: Siliconsultant,

Which Methods Of Optimization Parameters Of …   DA: 20 PA: 50 MOZ Rank: 80

  • It is known that the physical parameters of semiconductor materials strongly depend on the presence of various types of defects
  • Crystals or films grown for the first time usually do not meet the

Scepter Plastic Electrical Junction Boxes Products   DA: 18 PA: 50 MOZ Rank: 79

  • National Renewable Energy Laboratory, Golden, CO 80401, USA * Now at Siliconsultant, P.O
  • Box 1453, Evergreen, CO… Learn more about IHS Goldfire
  • MPA-C Clean-Design Valve Terminal
  • Festo Corporation Industry First - Edge Computing …

Journal Of Crystal Growth   DA: 14 PA: 50 MOZ Rank: 76

  • specially grown by SiliConsultant [13]
  • The ingots were pulled from < 100> seeds, with a 2 mm/min speed at the full diameter (around 25 mm, in the 23–31 mm range)
  • For each doping type, one ingot was grown as a control ingot; one was intentionally doped with Cu and one with Ni

Chemical Natures And Distributions Of Metal Impurities …   DA: 23 PA: 24 MOZ Rank: 60

Abstract We present a comprehensive summary of our observations of metal‐rich particles in multicrystalline silicon (mc‐Si) solar cell materials from multiple vendors, including directionally‐solid

BigSkyProgram   DA: 21 PA: 18 MOZ Rank: 53

ACCGE Ted Ciszek, Siliconsultant, Email: [email protected] OMVPE Rao Tatavarti, MicroLink Devices, Email: [email protected] This session focuses on the growth of crystalline materials for photovoltaics and other energy technologies, such as thermoelectrics and piezoelectric.

2015 Printed Program JMR 7-23-15 Final   DA: 21 PA: 48 MOZ Rank: 84

8 | Page AACG Organization (2015-2017) President: Robert Biefeld (Sandia National Laboratories) Vice President: Joan Redwing (Pennsylvania State University) Treasurer: Luis Zepeda-Ruiz (Lawrence Berkley National Labs) Secretary: Mariya Zhuravleva (University of Tennessee) Executive Administrator: Shoshana Nash (AACG) Executive Committee:

Reassessment Of The Recombination Parameters Of …   DA: 18 PA: 31 MOZ Rank: 65

  • Czochralski (Cz) ingots specially grown by Siliconsultant.24 One p- and n-type ingots were grown as control ingots, and one p- and n-type ingots were intentionally doped with chro-mium
  • The 25mm diameter ingots (average) were then cut to wafers
  • 3–5 wafers selected at different …

Photovoltaic Materials And Crystal Growth Research And   DA: 21 PA: 38 MOZ Rank: 76

  • Some of the effects of the 2003–2008 “Silicon shortage” and the 2011-to-present “Excess capacity” regions of the Fig
  • 1 learning curve can be discussed in the context of the silicon IC industry process flow chart of Fig
  • 3.In brief, sand or quartzite is reduced with coke in an arc furnace, creating low-purity MG silicon which is reacted with HCl to form chlorosilanes.

To Better The Solar Cells, To Better The Environment   DA: 9 PA: 7 MOZ Rank: 34

  • Store electricity (battery info) TOP
  • Batteries Stand-alone solar electric systems use lead acid batteries to store power for cloudy weather or for nighttime
  • Lead acid batteries can be made to withstand deep-cycling, that is discharging them to near-empty
  • They do not have any *memory* like NiCds do.

Bulk Multicrystalline Silicon Growth For Photovoltaic (PV   DA: 21 PA: 38 MOZ Rank: 78

  • IntroductionSilicon (Si) is the second member in Group IVA in the periodic table and is a semiconductor with a band gap E g of 1.12 eV at 25 °C
  • Widely known as the second most abundant element by weight in the earth's crust, silicon in its pure crystalline form is the dominant semiconductor material used in photovoltaics (PV).

T. F. Ciszek   DA: 19 PA: 19 MOZ Rank: 58

  • IEEE Xplore, delivering full text access to the world's highest quality technical literature in engineering and technology

2.626 Fundamentals Of Photovoltaics Fall 2008 For   DA: 14 PA: 50 MOZ Rank: 85

  • Silicon is the second most abundant element on Earth after oxygen (28% of the Earth’s crust)
  • Its most familiar forms are sand and quartzite (the latter one is more pure).

Synchrotron-based Spectrally-resolved X-ray Beam …   DA: 20 PA: 50 MOZ Rank: 92

  • (5) National Renewable Energy Laboratory, Golden, CO; Current address: Siliconsultant, P
  • Box 1453, Evergreen, CO 80437 USA McHugo, Thompson, et al
  • [1, 2] were the first to apply a suite of synchrotron-based ana-lytical techniques to study efficiency-limiting, impurity-related defects in …

Analysis Of Copper-rich Precipitates In Silicon: Chemical   DA: 17 PA: 22 MOZ Rank: 62

  • Box 1453, Evergreen, Colorado 80437; Barry Lai and Zhonghou Cai; Advanced Photon Source, Argonne National Laboratory, Argonne, Illinois 60439; Eicke R
  • Weber; Department of Materials Science and Engineering, University of California, Berkeley, California 94720 and Lawrence Berkeley National Laboratory, Berkeley, California

Luminescent, Quantum Dot-based Anti-reflective …   DA: 20 PA: 50 MOZ Rank: 94

Within four to seven years, electricity generated from solar cells will cost less than grid electricity, making it the cleanest, cheapest, and most abundant energy source on the planet.

Solar Readings, Solar References   DA: 9 PA: 20 MOZ Rank: 54

  • from: Building converts to solar power

Rohit Dulal   DA: 15 PA: 14 MOZ Rank: 55

  • 1) the value of listening more than speaking
  • 2) to step back to facilitate rather than always be at the 'head of the pack'
  • 3) to be serious at times to get work done but also maintain cheerfulness
  • 4) be receptive to ideas but also establish my beliefs
  • 5) know team members and their conflicts so I am ready to assist.

US8603242B2   DA: 18 PA: 22 MOZ Rank: 67

US8603242B2 US12/713,170 US71317010A US8603242B2 US 8603242 B2 US8603242 B2 US 8603242B2 US 71317010 A US71317010 A US 71317010A US 8603242 B2 US8603242 B2 US 8603242B2 Authority US United States Prior art keywords semiconductor foil molten floating ribbon Prior art date 2009-02-26 Legal status (The legal status is an assumption and is not a legal conclusion.

Prime Cz-Si Wafer   DA: 13 PA: 23 MOZ Rank: 64

  • Silicon is an exceptionally important material for the advanced technological devices
  • Single-crystal silicon wafers are high performance semiconductors which are valuable in several different application areas
  • Amongst the two different single-crystal growth methods, Czochralski method is the commercially most commonly used method since it is suitable for high volume production and provides

Daily Emotet IoCs And Notes For 04/12-15/19   DA: 22 PA: 50 MOZ Rank: 21

  • Emotet Malware Document links/IOCs for 04/12-15/19 as of 04/15/19 23:59 EDT
  • Notes and Credits now at the bottom Follow us on twitter @cryptolaemus1 for more updates.
  • Epoch 1 Document/Downloader links seen for 04/12-15/19

GUNTHER Portfolio: Secretive Solar Start-up, Solarvalue …   DA: 29 PA: 50 MOZ Rank: 20

Secretive solar start-up, Solarvalue AG, reveals solar grade silicon production plans through joint venture bid for TDR-Metalurgija in Ruse, Slovenia   DA: 21 PA: 14 MOZ Rank: 66

  • Geolite : Electronic mail: Information P
  • Box 1453 Sales Inquiries Evergreen, CO 80437-1453: google-site-verification: google738e3e63b84cbfea.html: See for consulting services in silicon crystal growth
  • See for fine gemstones & jewelry

Metal Precipitation At Grain Boundaries In Silicon   DA: 17 PA: 22 MOZ Rank: 71

  • Synchrotron-based analytical microprobe techniques, electron backscatter diffraction, and defect etching are combined to determine the dependence of metal silicide precipitate formation on grain boundary character and microstructure in multicrystalline silicon (mc-Si)
  • Metal silicide precipitate decoration is observed to increase with decreasing atomic coincidence within the grain boundary

Chemical Natures And Distributions Of Metal …   DA: 20 PA: 50 MOZ Rank: 17

  • INTRODUCTION M etals are known to exist in commercial multicrystalline silicon (mc-Si) materials in concentrations as high as 1014–1016 cm 3 (Figure 1).1–3 These impurities can decrease the efficiencies of silicon- based devices in a variety of ways, including bulk recombination,4,5 increased leakage current,6–8 and direct shunting.9,10 The groundbreaking study of Davis et al.11

US8501139B2   DA: 18 PA: 22 MOZ Rank: 74

One embodiment of the present invention is a method for producing a silicon (Si) and/or germanium (Ge) foil, the method including: dissolving a Si and/or Ge source material in a molten metallic bath at an elevated temperature T 2 , wherein the density of Si and/or Ge is smaller than the density of the molten metallic bath; cooling the molten metallic bath to a lower temperature T 1 , thereby

Things I'd Like People To Know: Krampus Wish List   DA: 37 PA: 50 MOZ Rank: 15

  • The mgSi is crushed and fed into the top of a reactor, and HCl is fed in near the bottom
  • They are reacted at moderate temps, a few hundred degrees C, to form a mixture of silicon tetrachloride (SiCl4 "STC") and trichlorosilane (SiHCl3 "TCS")
  • The TCS is the desired product, but STC can be converted to TCS or fed back into the reactor or used for other things, like fumed silica.

Characterization Of Cu And Ni Precipitates In N– And …   DA: 10 PA: 26 MOZ Rank: 72

  • / Energy Procedia 92 ( 2016 ) 880 – 885 Fig
  • Micro-PL images of a 1.6mm×0.7mm area on the p-type Ni-doped sample
  • Discussion Table 1 lists the solubility and diffusivity data of Cu and Ni at 500 oC~700 C.In the samples in this study, [Ni]=

US Patent For Process For Producing Silicon Carbide   DA: 18 PA: 15 MOZ Rank: 70

  • A process is described for producing silicon carbide crystals having increased minority carrier lifetimes
  • The process includes the steps of heating and slowly cooling a silicon carbide crystal having a first concentration of minority carrier recombination centers such that the resultant concentration of minority carrier recombination centers is lower than the first concentration.

Innovative Industrial Applications Of EPM …   DA: 26 PA: 6 MOZ Rank: 70

  • This PhD thesis presents an overview of the most recent industrial applications of the EPM (Electromagnetic Processing of Materials) going into details on the directional solidification processes in TiAl alloys and silicon for photovoltaic applications
  • The design and realization of an induction DSS prototype is presented.

(PDF) National Renewable Energy Laboratory …   DA: 16 PA: 50 MOZ Rank: 11

National Renewable Energy Laboratory Innovation for Our Energy Future Workshop on Crystalline Silicon Solar Cells and Modules: Materials and Processes

Numerical Study Of Metal Oxide Hetero-junction Solar …   DA: 18 PA: 38 MOZ Rank: 96

  • The simulation was conducted using a numerical software package AFORS-HET by Hahn–Meitner–Institute Berlin
  • The two-layer TiO 2 /CuO structure consists of a wide-bandgap window layer (W-layer) and an absorption layer (A-layer), while the three-layer TiO 2 /CuO/Cu 2 O structure has a back layer (V-layer) added next to the A-layer to enhance the open voltage, V OC, as discussed in our

GUNTHER Portfolio: August 2006   DA: 29 PA: 9 MOZ Rank: 79

  • Fresnel lenses have been a mainstay of CPV products using silicon solar cells and, in recent years, Multijunction III-V space solar cells
  • For example, Amonix has been a pioneer in using high efficiency silicon solar cells in 25kWp and greater scale CPV since 1989
  • sol3g is a company commercializing the GS200 module, a non-imaging, Fresnel CPV system, well suited for commercial and perhaps

Recently Analyzed Sites (17 hours ago) (2 day ago) (22 hours ago) (2 day ago) (14 day ago) (16 hours ago) (5 day ago) (1 seconds ago) (3 day ago) (4 day ago) (3 day ago) (6 day ago)